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GaAs quantum well

Based on

1 Articles
2015 Most recent source

Composition

1

C-doped aluminum gallium arsenide

C-doped AlGaAs
Type Complex Compound
Formula
Role layer
2

aluminium gallium arsenide

aluminum gallium arsenide aluminum-gallium arsenide
Type Single Compound
Formula Al0.24Ga0.76As
Role layer
3

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
4

aluminium gallium arsenide

aluminum gallium arsenide aluminum-gallium arsenide
Type Single Compound
Formula Al0.24Ga0.76As
Role layer
5

C-doped aluminum gallium arsenide

C-doped AlGaAs
Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
composite fermion Fermi wave vector

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • aluminium
  • gallium
See all (4)
  1. WldcBcf1iXHG8U
Product

GaAs quantum well

Thickness: 35 nm

Thickness: 36 nm

Thickness: 95 nm

Medium/Support: none

References

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