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GaN-based multiple quantum wells

Based on

1 Articles
2015 Most recent source

Composition

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

n-GaN

Type Complex Compound
Formula
Role layer
3

In0.1Ga0.9N quantum well/GaN barrier stack

In0.1Ga0.9N QW/GaN barrier stack
Type Nano Material
Formula
Role layer
4

gallium nitride

Type Single Compound
Formula GaN
Role layer
5

aluminium gallium nitride

aluminum gallium nitride AlGaN
Type Single Compound
Formula Al0.05Ga0.95N
Role layer
6

p-GaN

Type Complex Compound
Formula
Role layer
7

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
forbidden transverse acoustic phonon generation

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Applications

Characterization

Method Source
anisotropy spectroscopy dependent on delay time

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Biological effects

Preparation

References

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