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EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

P-doped Si

Type Complex Compound
Formula
Role raw materials
2

titanium nitride

Type Single Compound
Formula TiN
Role layer
3

1-ethyl-3-methyl-1H-imidazol-3-ium tetrafluoroborate

1-ethyl-3-methyl-imidazolium tetrafluoroborate 3-ethyl-1-methyl-imidazolium tetrafluoroborate 1-ethyl-3-methylimidazolium tetrafluoroborate N-methyl-N-ethylimidazolium tetrafluoroborate [C2MIM][BF4] [C2mim][BF4] [EMIM]-[BF4] [EMIM][BF4] [EMIM][BF4] [EMIm][BF4] [emim][BF4] EMIM[BF4] [EMIM]BF4 [Emim]BF4 EMIM-BF4 EMI[BF4] EMI[BF4] EMI-BF4 EMIMBF4 EMImBF4 EmimBF4 EMIBF4
Type Single Compound
Formula CH3CH2C3H3N2CH31+*BF41-
Role loaded material

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
areal capacitance

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Applications

Area Application Nanomaterial Variant Source
energy storage

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Characterization

Method Nanomaterial Variant Source
dielectric spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. f04gzKPYjojqw
  2. k2cs6CT5Lem1QItjOAPiwXeAymHW
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 12000 nm

Pore diameter: 30 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. HPgXxalCifyOZfRbDrf
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 12000 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. XH7MJ54jmQBEA
  2. vHbX9YhyQI3lrknzhKnTl3D6hpu6
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 12000 nm

Pore diameter: 50 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. Ng7ji2Maj6eQA
  2. DMVuwhdXVyJ576woz6mdTGm2Gsny
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 10000 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. uV1Q0ERR3WQPw
  2. XQp0999WH9prl592M8x6XefJSeDq
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 2000 nm

Medium/Support: none

References

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