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EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

P-doped Si

Type Complex Compound
Formula
Role raw materials
2

titanium nitride

Type Single Compound
Formula TiN
Role layer
3

1-ethyl-3-methyl-1H-imidazol-3-ium tetrafluoroborate

1-ethyl-3-methyl-imidazolium tetrafluoroborate 3-ethyl-1-methyl-imidazolium tetrafluoroborate 1-ethyl-3-methylimidazolium tetrafluoroborate N-methyl-N-ethylimidazolium tetrafluoroborate [C2MIM][BF4] [C2mim][BF4] [EMIM]-[BF4] [EMIM][BF4] [EMIM][BF4] [EMIm][BF4] [emim][BF4] EMIM[BF4] [EMIM]BF4 [Emim]BF4 EMIM-BF4 EMI[BF4] EMI[BF4] EMI-BF4 EMIMBF4 EMImBF4 EmimBF4 EMIBF4
Type Single Compound
Formula C6H11N2BF4
Role loaded material

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
areal capacitance

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Applications

Area Application Nanomaterial Variant Source
energy storage

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Characterization

Method Nanomaterial Variant Source
dielectric spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. 6Y82w8zMyTlxb
  2. viAhiGMBxc39biwa97yE6tjbhRas
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 10000 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. edocrPLDZvpEv
  2. f7p1cRVp0BAKCkG7FiwlDQDC7Q6E
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 2000 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. gbuYVT2QVVm4wug9WQr
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 12000 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. HlwLrSX4U8CtI
  2. gKNSeXTXPbQIitPngWWl8NTkbQlQ
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 12000 nm

Pore diameter: 30 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • P-doped Si
  1. D9tQ3ja5IMDiJ
  2. WemgmXY8dc7cBTIBd04WWOABaBmw
Product

EMI-BF4-loaded titanium nitride-coated nanoporous p-doped silicon

Pore depth: 12000 nm

Pore diameter: 50 nm

Medium/Support: none

References

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