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GaAs/AlGaAs multi quantum well-based structure

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide gallium aluminum arsenide Al0.2Ga0.8As AlGaAs GaAlAs
Type Single Compound
Formula Al0.2Ga0.8As
Role layer
2

Al0.2Ga0.8As/GaAs quantum well

Al0.2Ga0.8As/GaAs QW
Type Nano Material
Formula
Role layer
3

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide gallium aluminum arsenide Al0.2Ga0.8As AlGaAs GaAlAs
Type Single Compound
Formula Al0.2Ga0.8As
Role layer
4

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Urbach energy

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Applications

Characterization

Method Nanomaterial Variant Source
PC

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • aluminium
  • gallium
Product

GaAs/AlGaAs multi quantum well-based structure

Thickness: 200 nm

Medium/Support: none

References

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