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germanium antimony telluride - indium tin oxide film

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

platinum

Type Single Compound
Formula Pt
Role layer
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role layer
3

germanium antimony telluride - indium tin oxide film

ITO/GST/ITO film
Type Nano Material
Formula
Role layer
4

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
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Applications

Area Application Nanomaterial Variant Source
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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. KT
  2. 4k9nzu
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 14 nm

Thickness: < 300 nm

Medium: none

Support: SiO2 wafer

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. Ok
  2. 5JZiHY
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 6 nm

Thickness: < 300 nm

Medium: none

Support: SiO2 wafer

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. yH
  2. 3E3hcK
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 2 nm

Thickness: < 300 nm

Medium: none

Support: SiO2 wafer

Method 4

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. r1
  2. 9Qneqk
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: < 300 nm

Medium: none

Support: SiO2 wafer

References

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