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gallium arsenide/cadmium-magnesium-tellurium/zinc telluride/CdTe quantum well/cadmium-magnesium-tellurium/cobalt

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

cadmium-magnesium-tellurium

Cd1-yMgyTe (Cd,Mg)Te
Type Complex Compound
Formula
Role layer
2

zinc telluride

Type Single Compound
Formula ZnTe
Role layer
3

CdTe quantum well

CdTe QW
Type Nano Material
Formula
Role layer
4

cadmium-magnesium-tellurium

Cd1-yMgyTe (Cd,Mg)Te
Type Complex Compound
Formula
Role layer
5

cobalt

Type Single Compound
Formula Co
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
characteristic rise time for transition of photo-excited quantum well's carriers from non-polarized to spin-polarized state

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Applications

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • cadmium/tellurium/zinc
  • magnesium
  • gallium arsenide
  1. 8L6M02eQ13AS5MYpvdXaudRe1
Product

gallium arsenide/cadmium-magnesium-tellurium/zinc telluride/CdTe quantum well/cadmium-magnesium-tellurium/cobalt

Thickness: 0 - 40 nm

Thickness: 0 - 7 nm

Thickness: 10 nm

Thickness: 3200 nm

Medium: none

Support: gallium arsenide

References

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