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silver,indium-doped antimony telluride - indium tin oxide film

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

platinum

Type Single Compound
Formula Pt
Role layer
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role layer
3

silver,indium-doped antimony telluride

AIST
Type Single Compound
Formula Ag3In4Sb76Te17
Role layer
4

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
XY color gamut

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Applications

Area Application Nanomaterial Variant Source
electronic paper

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Characterization

Method Nanomaterial Variant Source
diffuse reflectance spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. IY
  2. NMm0DW
Product

silver,indium-doped antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 6 nm

Thickness: < 300 nm

Medium: none

Support: SiO2 wafer

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. QQ
  2. 9kFMeT
Product

silver,indium-doped antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 110 nm

Thickness: 7 nm

Medium: none

Support: SiO2 wafer

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. y7
  2. bkCd9l
Product

silver,indium-doped antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 2 nm

Thickness: < 300 nm

Medium: none

Support: SiO2 wafer

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. rE
  2. LTs4hz
Product

silver,indium-doped antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 7 nm

Thickness: 70 nm

Medium: none

Support: SiO2 wafer

Method 5

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. dX
  2. kE7a2E
Product

silver,indium-doped antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 6 nm

Thickness: < 300 nm

Medium: none

Support: SiO2 wafer

References

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