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germanium antimony telluride - indium tin oxide film

Based on

2 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

platinum

Type Single Compound
Formula Pt
Role layer
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role layer
3

germanium antimony telluride

germanium-antimony-tellurium Ge-Sb-Te ternary alloy GST-225 GST
Type Single Compound
Formula Ge2Sb2Te5
Role layer
4

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
XY color gamut

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Applications

Area Application Nanomaterial Variant Source
electronic paper

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Characterization

Method Nanomaterial Variant Source
diffuse reflectance spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. d9
  2. 848egR
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 110 nm

Thickness: 7 nm

Medium: none

Support: SiO2 wafer

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. Wc
  2. GyV3ec
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: < 300 nm

Medium: none

Support: SiO2 wafer

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. 8h
  2. AyKaLs
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 7 nm

Thickness: 70 nm

Medium: none

Support: SiO2 wafer

Method 4

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. 4j
  2. LwrhLn
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 6 nm

Thickness: < 300 nm

Medium: none

Support: SiO2 wafer

Method 5

Type: Physical formation
Source:
Starting materials
  • SiO2 wafer
  • platinum
  1. K9
  2. m0HOqx
Product

germanium antimony telluride - indium tin oxide film

Thickness: 10 nm

Thickness: 100 nm

Thickness: 160 nm

Thickness: 7 nm

Medium: none

Support: SiO2 wafer

References

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