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Al2O3-capped p-Si stack with interface formed between H-terminated p-Si film and oxide-terminated p-Si substrate

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
2

Vacuous

Type
Formula
Role layer
3

atomic hydrogen

hydrogen atom
Type Single Compound
Formula H
Role layer
4

p-doped silicon

p-doped Si p-Si
Type Complex Compound
Formula
Role layer
5

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contribution to interfacial thermal resistance due to van der Waals bonding

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon-on-insulator
Product

Al2O3-capped p-Si stack with interface formed between H-terminated p-Si film and oxide-terminated p-Si substrate

Spacing: 2.8 - 3.2 nm

Thickness: 10 nm

Thickness: ~ 300 nm

Medium: none

Support: p-doped silicon

References

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