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N-doped InP quantum dot-embedded multilayer GaP film

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

n-GaP

Type Complex Compound
Formula
Role layer
2

N-doped InP quantum dot-embedded GaP film

In(N)P QD-embedded GaP film
Type Nano Material
Formula
Role layer
3

gallium(III) phosphide

gallium phosphide GaP B
Type Single Compound
Formula GaP
Role layer
4

p-GaP

Type Complex Compound
Formula
Role layer
5

p+-GaP

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density dependent on illumination

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Applications

Area Application Nanomaterial Variant Source
power generation

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus
  • silicon
  • gallium
  1. ccR4Tyl7izcZt
  2. 3pHxmai
Product

N-doped InP quantum dot-embedded multilayer GaP film

Thickness: 100 nm

Thickness: 200 nm

Thickness: 50 nm

Medium/Support: none

References

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