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rings based on indium-gallium-arsenide-phosphide quantum wells

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

rings based on indium-gallium-arsenide-phosphide quantum wells

rings based on InGaAsP quantum wells
Type Nano Material
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
effective index of propagation

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Applications

Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Product

rings based on indium-gallium-arsenide-phosphide quantum wells

Radius: 10000 nm

Width: 500 nm

Medium: none

Support: silicon dioxide

Method 2

Type: Chemical synthesis
Source:
Product

rings based on indium-gallium-arsenide-phosphide quantum wells

Distance between rings: 200 nm

Radius: 10000 nm

Width: 500 nm

Medium: none

Support: silicon dioxide

References

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