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InGaAs/GaAsP multipole quantum well

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

InGaAs/GaAsP bilayer

Type Nano Material
Formula
Role layer
2

GaAs0.8928P0.1072

GaAsP
Type Single Compound
Formula GaAs0.8928P0.1072
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium arsenide
Product

InGaAs/GaAsP multipole quantum well

Size: not specified

Medium: none

Support: gallium arsenide

References

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