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GaAs0.71Sb0.29/InP nanowires

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium arsenide antimonide nanowires

GaAs0.56Sb0.44 NW
Type Nano Material
Formula
Role core
2

indium(III) phosphide

indium phosphide
Type Single Compound
Formula InP
Role layer

Properties

General physical and chemical properties

Property Value Source
emission

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. tinUGmlpEfP2xUAJuL0Moh4ObN8J
Product

GaAs0.71Sb0.29/InP nanowires

References

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