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Ge3Sb2Te6/(ZnS)80(SiO2)20

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

germanium antimony telluride

GST-326 a-GST
Type Single Compound
Formula Ge3Sb2Te6
Role layer
2

(ZnS)80(SiO2)20

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Hall carrier density

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

Ge3Sb2Te6/(ZnS)80(SiO2)20

Thickness: ~ 80 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • germanium antimony telluride
  1. 2ld4mCf
Product

Ge3Sb2Te6/(ZnS)80(SiO2)20

Thickness: ~ 80 nm

Medium/Support: none

References

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