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GaAs QW with Al0.3Ga0.7As barriers

Based on

1 Articles
2014 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
2

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Al0.3Ga0.7As
Role layer
3

Al0.3Ga0.7As/GaAs film

Type Nano Material
Formula
Role layer
4

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Al0.3Ga0.7As
Role layer
5

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
quantum droplets formation in ultrashort optical pulses-induced electron-hole plasma

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  1. evpYKIln5t3AQWXcJHWrBPlxZ4uXNvAF0yVYAbBJ4zMj7Zdr6QvVTN7jsfB
  2. CD76QE43cPf5rTlKitbZ9MEJWiC
Product

GaAs QW with Al0.3Ga0.7As barriers

Thickness: 10 nm

Thickness: 300 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  1. Fv7WpNFpbggLV3CAXjhck8qm4AzVGhEgmyRI4bp52lvoC2vUqCW0JgwGESh
  2. rfZHJaKP0tb42grCKs7ApaqRK05
Product

GaAs QW with Al0.3Ga0.7As barriers

Thickness: 10 nm

Thickness: 300 nm

Medium/Support: none

References

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