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Ag/SiO2/Au resistive switching memory cell

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

chromium

Type Single Compound
Formula Cr
Role layer
2

gold

Type Single Compound
Formula Au
Role layer
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
4

silver

Type Single Compound
Formula Ag
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on cycles

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
Product

Ag/SiO2/Au resistive switching memory cell

Thickness: 100 nm

Thickness: 5 nm

Thickness: 50 nm

Medium: none

Support: SiO2/Si

References

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