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amorphous SiC/4H-SiC structure

Based on

7 Articles
4 Patents
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon carbide

carborundum
Type Single Compound
Formula SiC
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
deuterium temperature-programmed-desorption spectrum dependent on temperature

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Applications

Area Application Nanomaterial Variant Source
engineering

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Characterization

Method Nanomaterial Variant Source
field emission scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. AKwYB1YLnJ
  2. KnZfyDS
  3. hGK9Fyvsx3T5d8kcrKsne5
Product

amorphous SiC/4H-SiC structure

Thickness: ~ 3 nm

Medium: none

Support: doped silicon carbide

Method 2

Type: Physical formation
Source:
Starting materials
  1. Mp9p2hgvI
Product

amorphous SiC/4H-SiC structure

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. gqpBi8Y9G9
  2. lg54aYQBe
  3. rhXwPfLnLCmtgNId2Qxdum
Product

amorphous SiC/4H-SiC structure

Thickness: ~ 3 nm

Medium: none

Support: doped silicon carbide

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • silicon hydride
  • propane
Product

amorphous SiC/4H-SiC structure

Thickness: 30 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon carbide
  1. wP1yxItuHL
  2. DSnyGjJqZK
  3. aZIwpqcGHf9QoCZUVUDQF5
Product

amorphous SiC/4H-SiC structure

Thickness: ~ 3 nm

Medium: none

Support: doped silicon carbide

References

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