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NDI-C8 thin film on Si/SiO2

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

C22H22N2O4

Type Single Compound
Formula C22H22N2O4
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • C22H22N2O4
  • Si/SiO2
Product

NDI-C8 thin film on Si/SiO2

Thickness: 2.3 - 2.7 nm

Medium: none

Support: Si/SiO2

Method 2

Type: Physical formation
Source:
Starting materials
  • C22H22N2O4
  • highly oriented pyrolytic graphite
Product

NDI-C8 thin film on Si/SiO2

Thickness: 0.25 - 5.0 nm

Medium: none

Support: highly oriented pyrolytic graphite

References

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