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(Ga,Mn)As thin film

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

(Ga,Mn)As

Type Complex Compound
Formula
Role layer
2

16-mercapto-hexadecanoic acid

16-mercaptohexadecanoic acid mercaptohexadecanoic acid 16-mercaptopalmitic acid 16-MHDA silole 16-MP MHDA MHA
Type Single Compound
Formula HS(CH2)15COOH
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Curie temperature

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Applications

Characterization

Method Nanomaterial Variant Source
other

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. jR82IpRhWknYiGcz
  2. tVtgvg8LH1hkOkBY
  3. Qe3qC
  4. WXTSm
Product

(Ga,Mn)As thin film

Roughness: < 2 nm

Thickness: 5 - 10 nm

Medium: none

Support: gallium arsenide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. ImaYowNCLTYoZmj2
  2. RMputGFii1yiqnMp
  3. nmwrh
  4. 1xrXV
Product

(Ga,Mn)As thin film

Roughness: 2 nm

Thickness: 9 nm

Medium: none

Support: gallium arsenide

Method 3

Type: Chemical synthesis
Source:
Starting materials
  1. 8Uf8sZtpwP7qVXLo
  2. mEc4wl7AHWdt6zJV
  3. nuIIf
  4. OdNBD
Product

(Ga,Mn)As thin film

Roughness: < 2 nm

Thickness: 10 nm

Medium: none

Support: gallium arsenide

Method 4

Type: Chemical synthesis
Source:
Starting materials
  1. N5YLVXwi8noP05KJ
  2. IG5HBl5OPFSjpjNb
  3. Aoh0H
  4. qeNNk
Product

(Ga,Mn)As thin film

Roughness: < 2 nm

Square size: 3000 nm

Thickness: 5 - 10 nm

Medium: none

Support: gallium arsenide

Method 5

Type: Chemical synthesis
Source:
Starting materials
  1. jsSJPH0ddW13yUJa
  2. BLCLfY9EMEzmWVTw
  3. V0nsF
  4. zh3Ve
Product

(Ga,Mn)As thin film

Thickness: 10 nm

Thickness: < 2 nm

Medium: none

Support: gallium arsenide

References

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