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(Ga,Mn)As thin film

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

(Ga,Mn)As

Type Complex Compound
Formula
Role layer
2

16-mercapto-hexadecanoic acid

16-mercaptohexadecanoic acid mercaptohexadecanoic acid 16-mercaptopalmitic acid 16-MHDA silole 16-MP MHDA MHA
Type Single Compound
Formula HS(CH2)15COOH
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Curie temperature

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Applications

Characterization

Method Nanomaterial Variant Source
other

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. NiFmoXbWOR1D2iIj
  2. 5A3FoZZUO4ScqeSf
  3. iTxMW
  4. 4OIyx
Product

(Ga,Mn)As thin film

Thickness: 10 nm

Thickness: < 2 nm

Medium: none

Support: gallium arsenide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. TUd45WYYZc1ISHtg
  2. 2v6t2RuBgFJq7BJY
  3. sup3B
  4. 79VcR
Product

(Ga,Mn)As thin film

Roughness: < 2 nm

Square size: 3000 nm

Thickness: 5 - 10 nm

Medium: none

Support: gallium arsenide

Method 3

Type: Chemical synthesis
Source:
Starting materials
  1. AGkgmxgp6mFum0Gc
  2. Nx8KefSxAwVdR7Jg
  3. mATgo
  4. Pu6Im
Product

(Ga,Mn)As thin film

Roughness: < 2 nm

Thickness: 10 nm

Medium: none

Support: gallium arsenide

Method 4

Type: Chemical synthesis
Source:
Starting materials
  1. Fc7uGHTAD4DR1k5V
  2. R79ESdBBTSOyGA7g
  3. 6uoBH
  4. sbSYU
Product

(Ga,Mn)As thin film

Roughness: 2 nm

Thickness: 9 nm

Medium: none

Support: gallium arsenide

Method 5

Type: Chemical synthesis
Source:
Starting materials
  1. 3EQ6AlAGeYZEElJp
  2. ZixCwe1PdRd2341o
  3. UPxro
  4. Lvitz
Product

(Ga,Mn)As thin film

Roughness: < 2 nm

Thickness: 5 - 10 nm

Medium: none

Support: gallium arsenide

References

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