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diF-TES-ADT/PS thin film

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

polystyrene

PS
Type Polymer
Formula
Role layer
2

2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene

diF-TES-ADT
Type Single Compound
Formula C35H38F2S2Si2
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • polystyrene
  • 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene
  1. 2xJFjv2
Product

diF-TES-ADT/PS thin film

Thickness: ~ 10 nm

Thickness: ~ 31 nm

Medium: none

Support: Si/SiO2

Method 2

Type: Physical formation
Source:
Starting materials
  • polystyrene
  • 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene
  1. PfGH5vw
Product

diF-TES-ADT/PS thin film

RMS roughness: 1.61 nm

Thickness: ~ 10 nm

Thickness: ~ 11 nm

Medium: none

Support: Si/SiO2

Method 3

Type: Physical formation
Source:
Starting materials
  • polystyrene
  • 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene
  1. 589dhah
Product

diF-TES-ADT/PS thin film

Thickness: ~ 10 nm

Thickness: ~ 21 nm

Medium: none

Support: Si/SiO2

Method 4

Type: Physical formation
Source:
Starting materials
  • polystyrene
  • 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene
  1. NX0dX6p
Product

diF-TES-ADT/PS thin film

Thickness: ~ 10 nm

Thickness: ~ 5 nm

Medium: none

Support: Si/SiO2

Method 5

Type: Physical formation
Source:
Starting materials
  • polystyrene
  • 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene
  1. KXRnH6a
Product

diF-TES-ADT/PS thin film

Thickness: ~ 10 nm

Thickness: ~ 11 nm

Medium: none

Support: Si/SiO2

References

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