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c-plane oriented InGaN/GaN multiple quantum well nanowires

Based on

2 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

n-GaN

Type Complex Compound
Formula
Role layer
2

InGaN/GaN quantum well

InGaN/GaN QW
Type Nano Material
Formula
Role layer
3

p-GaN

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
cathodoluminescence spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. 2C1tuKf71c
Product

c-plane oriented InGaN/GaN multiple quantum well nanowires

Diameter: 150 - 200 nm

Length: 2000 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • ammonia
  • trimethanidogallium
  1. yURZruvfPaeWsEbXJ
  2. gzEM0opE6xJ7L
Product

c-plane oriented InGaN/GaN multiple quantum well nanowires

Diameter: 150 - 200 nm

Length: 2000 nm

Medium/Support: none

References

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