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patterned GaAs (001)

Based on

11 Articles
2017 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoluminescence intensity

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Applications

Area Application Nanomaterial Variant Source
catalysis

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. LMPZIQA6L
  2. al6APC2vgL5zo4bmUZ3
Product

patterned GaAs (001)

Pattern periodicity: 46 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
Product

patterned GaAs (001)

Intercenter pit distance: 560 nm

Pit depth: ~ 50 nm

Pit width: 280 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. TR8wCVzOM
  2. PMKUq22OYMif5Gn4I96
  3. JS4eovzhOQIjQHQ4wU2
Product

patterned GaAs (001)

Pattern periodicity: 90 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • gallium arsenide
  1. dmt1dGZ2pAUQnzNQaRyf4HyaRZIMbMC6aPEX94PEk3cHsSuyfPZKoHpqSuMXNS
  2. dHc1Q80TdZi3nhrf9wOrPayUGnW9hfSCSwY14MrBEjVwDsVt45dLjo62NGn0AnwWtGkeJsymkjEBpAX3hVxEDI4So2SMn2HdwsKc1htDCwefzwr9Eq
Product

patterned GaAs (001)

Hole diameter: 146.2 - 154.4 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
  1. nHVmzv7rKlQ0NnXSfuwi9bxvDv1UtRFoLO8xpQHSwLSoBagXbFFVK4HhgpIlzEK1O6qEvhI
  2. AHUO7br141K6
Product

patterned GaAs (001)

Diameter: 100000 nm

Spacing: 200000 nm

Thickness: 15 nm

Medium: none

Support: silicon

References

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