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nonintentionally doped gallium nitride nanowires

Based on

2 Articles
1 Patents
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

p-type gallium nitride

Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for electrical conductivity

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-doped gallium nitride
Product

nonintentionally doped gallium nitride nanowires

Size: not specified

Medium/Support: none

References

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