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W2C on p-Si substrate

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

tungsten semicarbide

bi-tungsten carbide tungsten subcarbide ditungsten carbide tungsten carbide
Type Single Compound
Formula W2C
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
atomic concentration depth

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Applications

Area Application Nanomaterial Variant Source
electrodes/electrolytes

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • B-doped Si
  1. QkrAMXoTHHEjmIizNN1YCZDNUIlFx
  2. NjO0uv
  3. jNO6ldATlBvAW
Product

W2C on p-Si substrate

Thickness: 14.8 nm

Medium: none

Support: B-doped Si

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • B-doped Si
  1. SKy6OhrxFkHSizJZW13qGc1FrJ4ZG
  2. 09NmdZ
  3. Pf4pNANgZzCEe
Product

W2C on p-Si substrate

Thickness: 9.9 nm

Medium: none

Support: B-doped Si

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • B-doped Si
  1. v4nnOgPIEXHZoT2qxpDGsZG1RfRv2
  2. cZoLIZ
  3. js88VPTGNGfLt
Product

W2C on p-Si substrate

Thickness: 4.9 nm

Medium: none

Support: B-doped Si

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • B-doped Si
  1. hw6FwTWrRFkyk3CNVAL7SgyvQislM
  2. MmHhL1
  3. VjetQg3Y7oQzN
Product

W2C on p-Si substrate

Thickness: 2.5 nm

Medium: none

Support: B-doped Si

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • fluorine doped tin oxide
  1. 5v8ZgIRwiN2urlCyqhMrkU9sdEXBl
  2. h263ER
  3. stepaZeRsnLzx
Product

W2C on p-Si substrate

Thickness: 14.8 nm

Medium: none

Support: fluorine doped tin oxide

References

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