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graphene nanoribbons on trenched silicon carbide

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

n-doped silicon carbide

n-doped 4H-SiC
Type Complex Compound
Formula
Role raw materials
2

graphene nanoribbon

Type Nano Material
Formula
Role partial layer
3

graphene nanoribbon

Type Nano Material
Formula
Role partial layer

Properties

Applications

Characterization

Method Nanomaterial Variant Source
angle-resolved photoemission spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. Wsza0AQ
Product

graphene nanoribbons on trenched silicon carbide

Trench depth: 30 - 35 nm

Trench separation: 600 nm

Trench top width: 200 nm

Medium/Support: none

References

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