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MoO3-capped Bi2Se3 film (Bi0.5In0.5)2Se3/In2Se3 buffer layer

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

bismuth indium selenide film on indium selenide film/alumina substrate

(Bi0.5In0.5)2Se3 film on In2Se3/Al2O3
Type Nano Material
Formula
Role raw materials
2

bismuth(III) selenide

bismuth selenide
Type Single Compound
Formula Bi2Se3
Role layer
3

molybdenum(VI) oxide

molybdenum trioxide
Type Single Compound
Formula MoO3
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cyclotron resonance

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Applications

Characterization

Method Nanomaterial Variant Source
terahertz time-domain spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
  1. Et9Bz
Product

MoO3-capped Bi2Se3 film (Bi0.5In0.5)2Se3/In2Se3 buffer layer

Thickness: ~ 16 nm

Thickness: ~ 50 nm

Medium: none

Support: aluminium oxide

References

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