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n-GaN/In0.25Ga0.75N/GaN/In0.18Ga0.82N/GaN QWs/p-GaN

Based on

1 Articles
2015 Most recent source

Composition

1

n-type gallium nitride

n-type GaN
Type Complex Compound
Formula
Role raw materials
2

indium gallium nitride quantum well

In0.25Ga0.75N QW
Type Nano Material
Formula
Role raw materials
3

gallium nitride quantum wells

GaN QW
Type Nano Material
Formula
Role raw materials
4

indium gallium nitride quantum wells

InGaN quantum wells In0.18Ga0.82N QW
Type Nano Material
Formula
Role raw materials
5

gallium nitride quantum wells

GaN QW
Type Nano Material
Formula
Role raw materials
6

p-type gallium nitride

p-type GaN
Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • trimethylindigane
  • triethyl-gallium
  • ammonia
See all (5)
Product

n-GaN/In0.25Ga0.75N/GaN/In0.18Ga0.82N/GaN QWs/p-GaN

Height: 1100 nm

Radius: 450 nm

Medium: sapphire

Support: none

References

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