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indium arsenide/gallium antimonide nanowire array

Based on

1 Articles
2015 Most recent source

Composition

1

tin-doped indium arsenide

Sn-doped InAs n++-InAs
Type Complex Compound
Formula
Role raw materials
2

indium(III) arsenide

indium monoarsenide indium arsenide
Type Single Compound
Formula InAs
Role raw materials
3

tin-doped indium arsenide

Sn-doped InAs n++-InAs
Type Complex Compound
Formula
Role raw materials
4

gallium(III) antimonide

gallium antimonide
Type Single Compound
Formula GaSb
Role layer
5

gallium(III) antimonide

gallium antimonide
Type Single Compound
Formula GaSb
Role raw materials
6

zinc-doped gallium antimonide

Zn-doped GaSb p++-GaSb
Type Complex Compound
Formula
Role raw materials

Properties

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • triethyltin
  • arsine
  • trimethylindigane
See all (4)
  1. eWSNhRfTehrXtUSSh9NnAZntRC6Uvv5l
  2. 5ikZZU
Product

indium arsenide/gallium antimonide nanowire array

Diameter: ~ 41 nm

Diameter: ~ 45 nm

Length: ~ 525 nm

Pitch: 500 nm

Thickness: ~ 1 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • triethyltin
  • trimethylindigane
  • arsine
See all (4)
  1. Nm2I4RrsJltvVYqx6im1MT6vAAR8LUh1
  2. DQlk5P
Product

indium arsenide/gallium antimonide nanowire array

Diameter: 48 - 55 nm

Diameter: 49 nm

Length: ~ 515 nm

Pitch: 500 nm

Thickness: ~ 1 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • triethyltin
  • trimethylindigane
  • arsine
See all (4)
  1. CHmtQJSrqeeDS2V1YAhkDiDQeBVjH9vn
  2. I3LLuG
Product

indium arsenide/gallium antimonide nanowire array

Diameter: ~ 37 nm

Diameter: ~ 40 nm

Length: ~ 650 nm

Pitch: 500 nm

Thickness: ~ 1 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • triethyltin
  • arsine
  • trimethylindigane
See all (4)
  1. d6Q8aTLFIvJXEnzFXZzR7ME4I0bRGHUW
  2. D9fiOx
Product

indium arsenide/gallium antimonide nanowire array

Diameter: 49 nm

Diameter: 55 nm

Length: ~ 500 nm

Pitch: 400 nm

Thickness: ~ 1 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • triethyltin
  • trimethylindigane
  • arsine
See all (4)
  1. Y9OVQ174BvQrAKICNDjN63EX4UVLWuUP
  2. XIsCMz
Product

indium arsenide/gallium antimonide nanowire array

Diameter: 49 nm

Diameter: 55 nm

Length: ~ 475 nm

Pitch: 350 nm

Thickness: ~ 1 nm

Medium/Support: none

References

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