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hydrogen ion-doped indium gallium zinc oxide film

Based on

1 Articles
2015 Most recent source

Composition

1

indium gallium zinc oxide

IGZO
Type Single Compound
Formula In0.65Ga0.75Zn0.53O2.45
Role layer
2

indium gallium zinc oxide

IGZO
Type Single Compound
Formula In0.65Ga0.75Zn0.53O2.45
Role layer
3

hydrogen cation

hydrogen ion proton H+ ion H+
Type Single Compound
Formula H1+
Role dopant

Properties

General physical and chemical properties

Property Value Source
activation energy for electrical conduction dependent on temperature

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Applications

Characterization

Method Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. tXAAx2J5ZMc8gHBhHc
Product

hydrogen ion-doped indium gallium zinc oxide film

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. zCe2pDB55yXqUcYyUZ
Product

hydrogen ion-doped indium gallium zinc oxide film

Method 3

Type: Chemical synthesis
Source:
Starting materials
  1. ZCQn2J81XdWi6gQlYQ
Product

hydrogen ion-doped indium gallium zinc oxide film

Method 4

Type: Chemical synthesis
Source:
Starting materials
  1. wnG4AyZtE5cOFoRLZD
Product

hydrogen ion-doped indium gallium zinc oxide film

References

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