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(GaP)1-x-(ZnS)x nanowires

Based on

3 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

p-doped gallium phosphide

Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. LyprXqFt
  2. 1AAFDDM
  3. CeJY2tAZpBQkmVsOAXjyLalqTA41tLLPwaMmyUYq5uV4j1fhXleU
Product

(GaP)1-x-(ZnS)x nanowires

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. pmbekHoRKSxnVLZqU9drUJl
  2. bKw1dPP
Product

(GaP)1-x-(ZnS)x nanowires

Size: not specified

Medium: none

Support: highly oriented pyrolytic graphite

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) phosphide
  • zinc sulfide
  1. bOR3guxraPiS9piE2kdk0OjNjtSfbxdSAQU
  2. Vvv6g4
  3. RYEueY
  4. Anu9l0
Product

(GaP)1-x-(ZnS)x nanowires

Diameter: > 10 - > 100 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  1. Eoi8ANwq
  2. fyclEWc
  3. GwMfEMsaZDPOZ1SuUinAih3cfPXySjxAjJ2Bbx6TpWW0N7bzxtzy
Product

(GaP)1-x-(ZnS)x nanowires

Size: not specified

Medium/Support: none

References

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