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Si-doped GaN nanowires

Based on

9 Articles
2 Patents
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role raw materials
2

magnesium

Type Single Compound
Formula Mg
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Catalytic properties

Reaction Value Nanomaterial Variant Source
hydrogen evolution reaction

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Applications

Area Application Nanomaterial Variant Source
catalysis

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. 2sRmSCt
Product

Si-doped GaN nanowires

Length: ~ 2900 nm

Radius: 33 - 45 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  • silicon
Product

Si-doped GaN nanowires

Diameter: 130 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • n-doped silicon
Product

Si-doped GaN nanowires

Diameter: ~ 50 - 75 nm

Length: ~ 600 nm

Medium: none

Support: n-doped silicon

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • gallium nitride
Product

Si-doped GaN nanowires

Estimated diameter: ~ 280 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • gallium
  • nitrogen
  1. V7YlX13FQD9kBme
Product

Si-doped GaN nanowires

Diameter: 60 - 140 nm

Length: 800 nm

Medium/Support: none

References

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