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InAs/GaAs quantum dot molecule embedded within L3 cavity photonic crystal membrane

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped gallium arsenide

gallium arsenide
Type Single Compound
Formula GaAs
Role layer
2

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
3

n-doped gallium arsenide

n-type gallium arsenide gallium arsenide
Type Single Compound
Formula GaAs
Role layer
4

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
5

n-doped gallium arsenide

n-type gallium arsenide gallium arsenide
Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
anti-Stokes Raman intensity

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Applications

Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium arsenide
  1. I8o7FimYKxRMYBcEoc96lWlu5H3NgK
Product

InAs/GaAs quantum dot molecule embedded within L3 cavity photonic crystal membrane

Hole array lattice constant: 244 nm

Hole radius: 62 nm

Thickness: 10 nm

Thickness: 195 nm

Thickness: 30 nm

Thickness: 50 nm

Thickness: 95 nm

Medium/Support: none

References

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