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InAs1-xSbx nanowires

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium arsenide antimonide

Type Single Compound
Formula InAs0.934Sb0.066
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier concentration

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
X-ray diffraction

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic tetramer
  • antimony
  • indium
  1. UrDoCM9JsZ4swm1ARpb0TxZ
  2. lFHfI
  3. YTusXN
Product

InAs1-xSbx nanowires

Diameter: 70 - 120 nm

Length: 1300 - 2400 nm

Medium/Support: none

References

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