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SiFeyOz:SiOx dot-in-hole structure/GST/TiN/W/SiO2/Si

Based on

1 Articles
2015 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
2

tungsten

Type Single Compound
Formula W
Role layer
3

titanium nitride

Type Single Compound
Formula TiN
Role layer
4

germanium antimony telluride

Ge-Sb-Te ternary alloy Ge2Sb2Te5 GST
Type Single Compound
Formula Ge2Sb2Te5
Role layer
5

silicon-rich silicon oxide

SRSO SiOx
Type Single Compound
Formula SiO(x)
Role partial layer
6

oxidized polyferrocenyldimethylsilane nanodots

oxidized PFS nanodots SiFeyOz nanodots ox-PFS nanodots
Type Nano Material
Formula
Role partial layer

Properties

Applications

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. hAl2kGKohicevaPo7hp67LtgkonLNfLuZgP9nOMUrq
Product

SiFeyOz:SiOx dot-in-hole structure/GST/TiN/W/SiO2/Si

Center-to-center interdot distance: ~ 88 nm

Hole diameter: 65 nm

Thickness: 200 nm

Thickness: 30 nm

Thickness: 50 nm

Medium: none

Support: silicon

References

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