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native defect-engineered Bi2Te3 thin film on GaAs

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium arsenide irradiated with alpha particles

Type Complex Compound
Formula
Role layer
2

native defect-engineered Bi2Te3 film

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier concentration dependent on direction of temperature change

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Applications

Area Application Nanomaterial Variant Source
heat transfer

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. skYsQaJ6Thiq1FluYBNkDC
  2. Yc9O2ftgfy8
Product

native defect-engineered Bi2Te3 thin film on GaAs

Thickness: 11 - 740 nm

Thickness: ~ 9000 nm

Medium: none

Support: gallium(III) arsenide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. qkPh8VxIKvVhzlyY02j6x3
  2. eL2jBp5zB1D
Product

native defect-engineered Bi2Te3 thin film on GaAs

Thickness: 116 nm

Thickness: ~ 9000 nm

Medium: none

Support: gallium(III) arsenide

Method 3

Type: Chemical synthesis
Source:
Starting materials
  1. QlGCOKRVSK1MjNHiRUyRu7
  2. K4xbHiRWnvN
Product

native defect-engineered Bi2Te3 thin film on GaAs

Thickness: 740 nm

Thickness: ~ 9000 nm

Medium: none

Support: gallium(III) arsenide

Method 4

Type: Chemical synthesis
Source:
Starting materials
  1. VxGZbZ8fjCbuTRyFi0N606
  2. 8VNd6Ej02d3
Product

native defect-engineered Bi2Te3 thin film on GaAs

Thickness: 240 nm

Thickness: ~ 9000 nm

Medium: none

Support: gallium(III) arsenide

References

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