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InGaN/GaN multiple quantum well-incorporated gallium nitride nanowires with multiple junctions

Based on

1 Articles
2015 Most recent source

Composition

1

InGaN/GaN multiple quantum well-incorporated gallium nitride nanowires with junction

Type Nano Material
Formula
Role layer
2

InGaN/GaN multiple quantum well-incorporated gallium nitride nanowires with junction

Type Nano Material
Formula
Role layer
3

InGaN/GaN multiple quantum well-incorporated gallium nitride nanowires with junction

Type Nano Material
Formula
Role layer
4

n-doped gallium nitride

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
emission

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

References

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