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core/shell Rh/Cr2O3 nanoparticle decorated double-band p-GaN/p-In0.20Ga0.8N nanowire array on Si

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

p-type gallium nitride/indium gallium nitride nanowire heterostructure

double-band GaN/In0.20Ga0.8N nanowire heterostructure multi-stacked broadband GaN:Mg/InGaN:Mg nanowires p-GaN/p-In0.20Ga0.8N nanowire heterostructure p-type indium gallium nitride nanowire array p-GaN/p-In0.20Ga0.80N nanowire array on Si InGaN/GaN nanowires doped with magnesium In0.2Ga0.8N nanowires on Si (111) Mg-doped In0.2Ga0.8N nanowires In0.2Ga0.8N
Type Nano Material
Formula
Role core
2

Rh/Cr2O3 core/shell composite nanoparticles

Rh/Cr2O3 core/shell nanoparticles
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
emission

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Catalytic properties

Reaction Value Source
photocatalytic overall neutral water splitting

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Applications

Area Application Source
catalysis

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. oerw3OyjX9ytzUtBv
Product

core/shell Rh/Cr2O3 nanoparticle decorated double-band p-GaN/p-In0.20Ga0.8N nanowire array on Si

References

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