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double-band GaN/In0.20Ga0.8N nanowire heterostructure

Based on

1 Articles
2015 Most recent source

Composition

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

GaN:Mg/InGaN:Mg bilayer

Type Nano Material
Formula
Role layer
3

gallium nitride

Type Single Compound
Formula GaN
Role layer
4

magnesium

Type Single Compound
Formula Mg
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Area Application Nanomaterial Variant Source
catalysis

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • crystalline silicon
  1. mlpYJ9N
Product

double-band GaN/In0.20Ga0.8N nanowire heterostructure

Lateral size of top region: ~ 76 nm

Medium: none

Support: crystalline silicon

Method 2

Type: Physical formation
Source:
Product

double-band GaN/In0.20Ga0.8N nanowire heterostructure

Height: ~> 390 nm

Lateral size of top region: ~ 76 nm

Medium/Support: none

References

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