Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

double-band GaN/In0.20Ga0.8N nanowire heterostructure

Based on

1 Articles
2015 Most recent source

Composition

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

GaN:Mg/InGaN:Mg bilayer

Type Nano Material
Formula
Role layer
3

gallium nitride

Type Single Compound
Formula GaN
Role layer
4

magnesium

Type Single Compound
Formula Mg
Role dopant

Properties

General physical and chemical properties

Property Value Source

Full content is available to subscribers only

To view content please choose from the following:

Applications

Area Application Source

Full content is available to subscribers only

To view content please choose from the following:

Characterization

Method Source

Full content is available to subscribers only

To view content please choose from the following:

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • crystalline silicon
  1. L2doUbd
Product

double-band GaN/In0.20Ga0.8N nanowire heterostructure

Method 2

Type: Physical formation
Source:
Product

double-band GaN/In0.20Ga0.8N nanowire heterostructure

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial