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GaAs/Al0.9Ga0.1As microcavity embedding self-assembled InAs QD

Based on

1 Articles
2015 Most recent source

Composition

1

gallium arsenide/aluminium gallium arsenide bilayers

GaAs/Al0.9Ga0.1As bilayers
Type Nano Material
Formula
Role layer
2

indium arsenide quantum dot

InAs quantum dot InAs QD
Type Nano Material
Formula
Role layer
3

gallium arsenide/aluminium gallium arsenide bilayers

GaAs/Al0.9Ga0.1As bilayers
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
bottom-mirror output-coupling efficiency

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Applications

Area Application Source
data storage

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

References

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