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nanofluidic diode structure

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

p-doped silicon

p-type silicon p-type Si silicon
Type Single Compound
Formula Si
Role layer
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
3

phosphosilicate glass

PSG
Type Complex Compound
Formula
Role layer
4

silicon nitride

Type Single Compound
Formula Si3N4
Role partial layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
nanofluidics/microfluidics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • p-doped silicon
Product

nanofluidic diode structure

Nanosplit length: 200000 nm

Side channel width: 100000 nm

Surface gap of nanosplit: 70 nm

Thickness: 5500 nm

Trench length: 200000 nm

Trench width: 3000 nm

Medium/Support: none

References

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