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InGaAs/Cr forming compact multi-turn tubular structures

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium gallium arsenide

Type Single Compound
Formula In0.2Ga0.8As
Role layer
2

chromium

Type Single Compound
Formula Cr
Role layer

Properties

Applications

Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. rxk4TsZPH4ROtqSp7JzkKDk2wxA6Pgu
Product

InGaAs/Cr forming compact multi-turn tubular structures

Method 2

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. ImEs8Ow5UV4OQaJeSmhb45brf1lGC6r
Product

InGaAs/Cr forming compact multi-turn tubular structures

Method 3

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. 3eqDqHo7mUrxVWWnPui4U9JpNNM3ucN
Product

InGaAs/Cr forming compact multi-turn tubular structures

Method 4

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. Eax111fUFLVphtBFk1m8n4JGBBWzZ3d
Product

InGaAs/Cr forming compact multi-turn tubular structures

Method 5

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. RujsWyelrR2vonLwvKjXDtyz9M9Gozc
Product

InGaAs/Cr forming compact multi-turn tubular structures

References

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