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InGaAs/Cr forming compact multi-turn tubular structures

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium gallium arsenide

Type Single Compound
Formula In0.2Ga0.8As
Role layer
2

chromium

Type Single Compound
Formula Cr
Role layer

Properties

Applications

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. SlU3IllraLX0lgH0YxiwYrYTKxdhJDG
Product

InGaAs/Cr forming compact multi-turn tubular structures

Length: 100000 nm

Thickness: 15 nm

Thickness: ~ 11 nm

Tube radius: ~ 660 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. HmlXbR302aPIGcPVK8mSes5tzIJ0zFI
Product

InGaAs/Cr forming compact multi-turn tubular structures

Length: 100000 nm

Thickness: 15 nm

Thickness: ~ 17 nm

Tube radius: ~ 850 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. K7YcYb3tLrFmYwyJXXD3KN0WVFwdOnO
Product

InGaAs/Cr forming compact multi-turn tubular structures

Length: 100000 nm

Thickness: 15 nm

Thickness: 9.2 nm

Tube radius: 653 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. 04UGmaNR46EuJPJq6ZK28lY4GQhyAWJ
Product

InGaAs/Cr forming compact multi-turn tubular structures

Length: 100000 nm

Thickness: 15 nm

Thickness: ~ 16.5 nm

Tube radius: ~ 800 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
  1. Laqf1zbYTcGTCAgJZZnacUgPaBYPNNN
Product

InGaAs/Cr forming compact multi-turn tubular structures

Length: 100000 nm

Thickness: 15 nm

Thickness: ~ 17.5 nm

Tube radius: ~ 890 nm

Medium/Support: none

References

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