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GaAs waveguide with single layer of InGaAs quantum dots

Based on

1 Articles
2015 Most recent source

Composition

1

amorphous silicon

amorphous Si a-Si:H a-Si aSi
Type Single Compound
Formula Si
Role layer
2

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer
3

gallium aluminium arsenide

gallium aluminium arsenide Al0.8Ga0.2As AlGaAs
Type Single Compound
Formula Al0.8Ga0.2As
Role layer
4

GaAs waveguide with single layer of InGaAs quantum dots

GaAs waveguide with single layer of InGaAs QD
Type Nano Material
Formula
Role partial layer

Properties

General physical and chemical properties

Property Value Source
coherence time

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
fluorescence spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • low temperature gallium arsenide
  • aluminium
See all (4)
Product

GaAs waveguide with single layer of InGaAs quantum dots

References

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