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patterned n-/p-doped carborundum on nickel

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

nickel

Type Single Compound
Formula Ni
Role layer
2

n-type 4H-SiC

Type Complex Compound
Formula
Role layer
3

p-type 4H-SiC

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission dependent on electron-beam lithography dose

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Applications

Area Application Nanomaterial Variant Source
photonics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-type 4H-SiC
  • n-type 4H-SiC
Product

patterned n-/p-doped carborundum on nickel

Thickness: 100 nm

Thickness: 250 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
  1. NfRQEV36Y
  2. ZN0V
  3. xR6yuekSHRi0Vl08NA
Product

patterned n-/p-doped carborundum on nickel

Lattice array constant: 290 nm

Thickness: 100 nm

Thickness: 250 nm

Unercut depth: 600 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Product

patterned n-/p-doped carborundum on nickel

Cavity depth: 600 nm

Thickness: 100 nm

Thickness: 250 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
  1. B6EdOTCWl
  2. CuCj
  3. MUAHhEIb7w4wpgBXTr
Product

patterned n-/p-doped carborundum on nickel

Thickness: 100 nm

Thickness: 250 nm

Unercut depth: 600 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
  1. ypTBmk04p
  2. qeFN
  3. lDaBO5NceqkwNjl4EG
Product

patterned n-/p-doped carborundum on nickel

Thickness: 100 nm

Thickness: 250 nm

Unercut depth: 600 nm

Medium/Support: none

References

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