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In-Ga-Zn-O capped surface-oxidized porous Si nanowire arrays

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

surface-oxidized porous Si nanowire arrays

Type Nano Material
Formula
Role layer
2

a-IGZO

Type Complex Compound
Formula
Role layer

Properties

Applications

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. yLRPTLVC2VD8lCyDh0utv
  2. wVQgnTQm
  3. ePpz661
  4. uI6Q
Product

In-Ga-Zn-O capped surface-oxidized porous Si nanowire arrays

Thickness: ~ 4600 nm

Medium: none

Support: B-doped Si

Method 2

Type: Physical formation
Source:
  1. POKLwyYkYfvebl9rl8IUo
  2. IeDASU4c
  3. 5zvGSwu
  4. 1h3a
Product

In-Ga-Zn-O capped surface-oxidized porous Si nanowire arrays

Thickness: 3700 nm

Medium: none

Support: B-doped Si

Method 3

Type: Physical formation
Source:
  1. aDPJMqdyut7dph9CYbNaz
  2. l16I6GHA
  3. T4ZhfmU
  4. LRG9
Product

In-Ga-Zn-O capped surface-oxidized porous Si nanowire arrays

Thickness: 7600 nm

Medium: none

Support: B-doped Si

Method 4

Type: Physical formation
Source:
  1. DMIDEtpMimUuxMuIIEcYA
  2. Ihf6vTZ0
  3. oo07Bcl
  4. O3EF
Product

In-Ga-Zn-O capped surface-oxidized porous Si nanowire arrays

Thickness: ~ 6000 nm

Medium: none

Support: B-doped Si

References

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