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In-Ga-Zn-O capped porous Si nanowire arrays

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

porous Si nanowire arrays

Type Nano Material
Formula
Role layer
2

a-IGZO

Type Complex Compound
Formula
Role layer

Properties

Applications

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. MUFjaYVTiGDluXjfuVUO2
  2. x2vbYSEN
  3. q0fYuss
  4. rFfM
Product

In-Ga-Zn-O capped porous Si nanowire arrays

Thickness: 7600 nm

Medium: none

Support: B-doped Si

Method 2

Type: Physical formation
Source:
Starting materials
  1. EMhMXQralTsJn8FD843Ko
  2. IUrdqLmM
  3. 7jpJqVR
  4. C2Ek
Product

In-Ga-Zn-O capped porous Si nanowire arrays

Thickness: 3700 nm

Medium: none

Support: B-doped Si

Method 3

Type: Physical formation
Source:
Starting materials
  1. pyisdIQdLLWl5MuIKqbAU
  2. ClJ5iipy
  3. ztdJtki
  4. u53y
Product

In-Ga-Zn-O capped porous Si nanowire arrays

Thickness: ~ 4600 nm

Medium: none

Support: B-doped Si

Method 4

Type: Physical formation
Source:
Starting materials
  1. gOHOqD42V2bXQqEOJZCRY
  2. MZOlfENv
  3. hoS2Arq
  4. obNg
Product

In-Ga-Zn-O capped porous Si nanowire arrays

Thickness: ~ 6000 nm

Medium: none

Support: B-doped Si

References

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