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In-Ga-Zn-O capped porous Si nanowire arrays

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

porous Si nanowire arrays

Type Nano Material
Formula
Role layer
2

a-IGZO

Type Complex Compound
Formula
Role layer

Properties

Applications

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. MJu9vDHuufrlXx2MrxoJs
  2. U6zOLNIf
  3. BI8V4kg
  4. u2fF
Product

In-Ga-Zn-O capped porous Si nanowire arrays

Thickness: ~ 6000 nm

Medium: none

Support: B-doped Si

Method 2

Type: Physical formation
Source:
Starting materials
  1. VSUi1teY2xTen4B5pxxdX
  2. 4y82IEFw
  3. mTnrJ3P
  4. RuI4
Product

In-Ga-Zn-O capped porous Si nanowire arrays

Thickness: ~ 4600 nm

Medium: none

Support: B-doped Si

Method 3

Type: Physical formation
Source:
Starting materials
  1. BZrCimJMTrrH4qjM4s9s6
  2. vlvBxX8f
  3. bACyKiQ
  4. YWF3
Product

In-Ga-Zn-O capped porous Si nanowire arrays

Thickness: 3700 nm

Medium: none

Support: B-doped Si

Method 4

Type: Physical formation
Source:
Starting materials
  1. UGasAAXrc2Kjc7iufK0mw
  2. qemx0v9U
  3. jXUVTDA
  4. FAgQ
Product

In-Ga-Zn-O capped porous Si nanowire arrays

Thickness: 7600 nm

Medium: none

Support: B-doped Si

References

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