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erbium arsenide nanoparticles-doped In0.5Ga0.3Al0.2As film on InP

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

InAlAs

Type Single Compound
Formula InAlAs
Role layer
2

erbium arsenide nanoparticles-doped In0.5Ga0.3Al0.2As

ErAs nanoparticles-doped In0.5Ga0.3Al0.2As
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
photon scattering rate

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Applications

Area Application Source
power generation

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Characterization

Method Source
transmission electron microscopy

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Biological effects

Preparation

References

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