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ITO/MoO3/SQ1/MoO3/Al hole-only device

Based on

1 Articles
2014 Most recent source

Composition

1

molybdenum(VI) oxide

molybdenum trioxide
Type Single Compound
Formula MoO3
Role layer
2

2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine

SQ
Type Single Compound
Formula C32H50N2O6
Role layer
3

molybdenum(VI) oxide

molybdenum trioxide
Type Single Compound
Formula MoO3
Role layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
hole mobility

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tin-doped indium oxide
  1. Cfot9zfHV7hEdK6A6vfD
Product

ITO/MoO3/SQ1/MoO3/Al hole-only device

Thickness: 100 nm

Thickness: 6 nm

Thickness: 60 nm

Medium: none

Support: tin-doped indium oxide

References

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