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silicon δ-doped gallium arsenide-aluminium gallium arsenide core-shell nanowires

Based on

1 Articles
2015 Most recent source

Composition

1

gallium arsenide nanowires

Type Nano Material
Formula
Role core
2

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Al0.3Ga0.7As
Role layer
3

silicon

Type Single Compound
Formula Si
Role dopant
4

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
other

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • Si/SiO2
  • gallium
  1. tq4V0q
  2. VHu
Product

silicon δ-doped gallium arsenide-aluminium gallium arsenide core-shell nanowires

Interlayer spacing from core-shell interface to Si δ-doped layer: 5 nm

Thickness: 20 nm

Thickness: 5 nm

Medium: none

Support: Si/SiO2

References

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