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In0.1Ga0.9As/GaAs nanomembrane

Based on

1 Articles
2014 Most recent source

Composition

1

aluminium(III) arsenide

aluminium arsenide aluminum arsenide
Type Single Compound
Formula AlAs
Role partial layer
2

indium gallium arsenide/gallium arsenide bilayer

In0.1Ga0.9As/GaAs bilayer InGaAs/GaAs bilayer
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
strain distribution

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Applications

Area Application Nanomaterial Variant Source
membranes

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
  1. v7LnkL3Wb798vSRBonREBk
  2. 73AXGjBJyup2yHCfnWzy5Jr
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Wrinkle periodicity: ~ 67000 nm

Medium: none

Support: low temperature gallium arsenide

Method 2

Type: Chemical synthesis
Source:
  1. IddIY5ggzvi5AaGyXDofGR
  2. zy7angIU46t5iF40Tg2PyW3g
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Medium: none

Support: low temperature gallium arsenide

References

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