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indium gallium arsenide/gallium arsenide bilayer on aluminium arsenide-coated gallium arsenide substrate

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium(III) arsenide

aluminium arsenide aluminum arsenide
Type Single Compound
Formula AlAs
Role layer
2

indium gallium arsenide

InGaAs
Type Single Compound
Formula In0.1Ga0.9As
Role layer
3

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer

Properties

Applications

Characterization

Method Nanomaterial Variant Source
X-ray diffraction

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • low temperature gallium arsenide
  • gallium
Product

indium gallium arsenide/gallium arsenide bilayer on aluminium arsenide-coated gallium arsenide substrate

Thickness: 20 nm

Thickness: 200 nm

Medium: none

Support: low temperature gallium arsenide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • low temperature gallium arsenide
  • gallium
Product

indium gallium arsenide/gallium arsenide bilayer on aluminium arsenide-coated gallium arsenide substrate

Thickness: 10 nm

Thickness: 200 nm

Medium: none

Support: low temperature gallium arsenide

References

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